1 semiconductors summary schottky diode - v r = 60v; v f = 600mv(@1a); ic=1.65a description packaged in the new innovative 3x2 mlp (micro leaded package) outline, this combination dual comprises two 60v 0.9a schottky barrier diodes. this excellent combination provides users with highly efficient performance in applications including dc-dc converters and charging circuits. additionally users gain several other key benefits: performance capability equivalent to much larger packages improved circuit efficiency & power levels pcb area and device placement savings lower package height (0.9mm nom) reduced component count features ? extremely low v f , fast switching schottky ? i f = 1.65a continuous forward current ? 3mm x 2mm mlp applications ? dc-dc converters ? dc-dc modules ? mosfet gate drive circuits ? charging circuits ? mobile phones ? motor control device marking ? ds2 zxsds2m832 issue 2 june 2003 mpps? miniature package power solutions dual 60v, 1.65a schottky diode combination device reel size tape width quantity per reel zxsds2m832ta 7? 8mm 3000 units zxsds2m832tc 13? 8mm 10000 units ordering information bottom view pinout m l p 8 3 2 obsolete
zxsds2m832 semiconductors issue 2 june 2003 2 parameter symbol v alue unit junction to ambient (a)(f) r ja 83.3 c/w junction to ambient (b)(f) r ja 51 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w notes (a) for a dual device surface mounted on 8 sq. cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached. the copper area is split down the center line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper fr4 pcb, in still air conditions with minimal lead connections only . (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper fr4 pcb, in still air conditions with all exposed pads attached. the copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper fr4 pcb, in still air conditions with all exposed pads attached. the copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (f) for dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is rth= 250 c/w giving a power rating of ptot=400mw. thermal resistance parameter symbol limit unit reverse voltage v r 60 v forward voltage @ i f = 1000ma v f 600 mv forward current i f 1.65 a average forward current d=50%, t<=300us i fav 1.24 a non repetitive forward current t<=100us non repetitive forward current t<=10ms i fsm 16.8 5.63 a a power dissipation at ta=25 c (a)(f) linear derating factor p d 1.2 12 w mw/c power dissipation at ta=25 c (b)(f) linear derating factor p d 2 20 w mw/c power dissipation at ta=25 c (c)(f) linear derating factor p d 0.8 8 w mw/c power dissipation at ta=25 c (d)(f) linear derating factor p d 0.9 9 w mw/c power dissipation at ta=25 c (d)(g) linear derating factor p d 1.36 13.6 w mw/c power dissipation at ta=25 c (e)(g) linear derating factor p d 2.4 24 w mw/c storage temp, range tstg -55 to+150 c operating & storage temp, range tj -55 to+125 c absolute maximum ratings obsolete
zxsds2m832 semiconductors issue 2 june 2003 3 typical characteristics obsolete
zxsds2m832 semiconductors issue 2 june 2003 4 parameter symbol min. typ. max. unit c onditions static reverse breakdown voltage v(br)r 60 80 v ir = 300a* forward voltage v f 245 275 330 395 455 510 620 500 280 320 390 470 530 600 740 - mv mv mv mv mv mv mv mv i f = 50ma* i f = 100ma* i f = 250ma* i f = 500ma* i f = 750ma* i f = 1000ma* i f = 1500ma* i f = 1000ma*, t a = 100 c reverse current i r 50 100 a v r = 45v diode capacitance c d 17 pf f = 1mhz, v r = 25v reverse recovery time t rr 12 ns switched from i f = 500ma to i r = 500ma measured at i r = 50ma electrical characteristics (at t amb = 25c unless otherwise stated) notes * measured under pulsed conditions obsolete
zxsds2m832 semiconductors issue 2 june 2003 5 typical characteristics obsolete
zxsds2m832 semiconductors 6 issue 2 june 2003 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra? e19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 dim millimetres inches dim millimetres inches min max min max min max min max a 0.80 1.00 0.031 0.039 e 0.65 ref 0.0256 bsc a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 bsc a2 0.65 0.75 0.0255 0.0295 e2 0.43 0.63 0.017 0.0249 a3 0.15 0.25 0.006 0.0098 e4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 l 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 l2 - 0.125 0.00 0.005 d 3.00 bsc 0.118 bsc r 0.075 bsc 0.0029 bsc d2 0.82 1.02 0.032 0.040 0 12 0 12 d3 1.01 1.21 0.0397 0.0476 - ---- package dimensions controlling dimensions are in millimetres. approximate conversions are given in inches package outline (3mm x 2mm micro leaded package) obsolete
|
